http://rdf.ncbi.nlm.nih.gov/pubchem/reference/36861188

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contentType Journal Article
endingPage 12820
issn 1944-8252
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issueIdentifier 10
pageRange 12813-12820
publicationName ACS Applied Materials & Interfaces
startingPage 12813
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bibliographicCitation Ren L, Zhou J, Pan Z, Li H, Ding L, Zhang Z, Peng LM. Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process. ACS Appl Mater Interfaces. 2024 Mar 13;16(10):12813–20. doi: 10.1021/acsami.3c19479. PMID: 38412248.
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date 2024-02-27^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1021/acsami.3c19479
https://pubmed.ncbi.nlm.nih.gov/38412248
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language English
source https://pubmed.ncbi.nlm.nih.gov/
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title Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process

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