http://rdf.ncbi.nlm.nih.gov/pubchem/reference/4575407

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bibliographicCitation Wang J, Li S, Zou X, Ho J, Liao L, Xiao X, Jiang C, Hu W, Wang J, Li J. Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation. Small. 2015 Oct;11(44):5932–8. doi: 10.1002/smll.201501260.
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identifier https://doi.org/10.1002/smll.201501260
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title Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation
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