http://rdf.ncbi.nlm.nih.gov/pubchem/reference/888714

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contentType Journal Article
endingPage 3475
issn 0163-1829
issueIdentifier 5
pageRange 3473-3475
publicationName Physical review. B, Condensed matter
startingPage 3473
bibliographicCitation Satoh, Kuriyama. Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs. Phys Rev B Condens Matter. 1989 Aug 15;40(5):3473–5. doi: 10.1103/physrevb.40.3473. PMID: 9992312.
creator http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_66a84e798e6bc400a5f383670fd8ba08
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_36aa07f8295c0483136658888e20c7b8
date 1989-08-15^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1103/physrevb.40.3473
https://pubmed.ncbi.nlm.nih.gov/9992312
isPartOf http://rdf.ncbi.nlm.nih.gov/pubchem/journal/21168
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language English
source https://www.crossref.org/
https://pubmed.ncbi.nlm.nih.gov/
title Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs
discussesAsDerivedByTextMining http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71739
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/MD5_9d79293d1b9800c3c1d4fa39a32baa83

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