Predicate |
Object |
contentType |
Journal Article |
endingPage |
3475 |
issn |
0163-1829 |
issueIdentifier |
5 |
pageRange |
3473-3475 |
publicationName |
Physical review. B, Condensed matter |
startingPage |
3473 |
bibliographicCitation |
Satoh, Kuriyama. Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs. Phys Rev B Condens Matter. 1989 Aug 15;40(5):3473–5. doi: 10.1103/physrevb.40.3473. PMID: 9992312. |
creator |
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_66a84e798e6bc400a5f383670fd8ba08 http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_36aa07f8295c0483136658888e20c7b8 |
date |
1989-08-15^^<http://www.w3.org/2001/XMLSchema#date> |
identifier |
https://doi.org/10.1103/physrevb.40.3473 https://pubmed.ncbi.nlm.nih.gov/9992312 |
isPartOf |
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/21168 https://portal.issn.org/resource/ISSN/0163-1829 |
language |
English |
source |
https://www.crossref.org/ https://pubmed.ncbi.nlm.nih.gov/ |
title |
Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs |
discussesAsDerivedByTextMining |
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71739 http://rdf.ncbi.nlm.nih.gov/pubchem/gene/MD5_9d79293d1b9800c3c1d4fa39a32baa83 |