"A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with ..."

Hideaki Kurata et al. (2007)

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DOI: 10.1093/IETELE/E90-C.11.2146

access: closed

type: Journal Article

metadata version: 2022-10-20

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Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa:
A 126 mm² 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Trans. Electron. 90-C(11): 2146-2156 (2007)

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