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ORCIDMicroelectronics Reliability, Volume 56
Volume 56, January 2016
- Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng
, Lei Song, Lihua Dai:
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. 1-9 - Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis:
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. 10-16 - Han-Han Lu, Jing-Ping Xu, Lu Liu, Li-Sheng Wang, Pui To Lai, Wing Man Tang:
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. 17-21 - Felix Palumbo, Salvatore Lombardo, Moshe Eizenberg:
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks. 22-28 - Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia, M. A. Quevedo-Lopez:
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors. 29-33 - Jian Ren, Dawei Yan, Wenjie Mou, Yang Zhai, Guofeng Yang, Xiaofeng Gu:
Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors. 34-36 - A. Sasikumar, A. R. Arehart, D. W. Cardwell, C. M. Jackson, W. Sun, Z. Zhang, S. A. Ringel:
Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs. 37-44 - A. R. Arehart, A. Sasikumar, Glen David Via, Brian S. Poling, E. R. Heller, S. A. Ringel:
Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN. 45-48 - Shengqi Zhou, Luowei Zhou, Litao Yu, Sucheng Liu, Quanming Luo, Pengju Sun, Junke Wu:
Monitoring chip fatigue in an IGBT module based on grey relational analysis. 49-52 - Young-Pil Kim, Young-Shin Kim, Seok-Cheol Ko:
Thermal characteristics and fabrication of silicon sub-mount based LED package. 53-60 - Hyun-Sik Choi:
Main degradation mechanism in AsTeGeSiN threshold switching devices. 61-65 - Derming Lian, Pei Li Lin:
Berkovich nanoindentation on single SiGe epitaxial films. 66-72 - Ákos Nemcsics:
On the shape formation of the droplet epitaxial quantum dots. 73-77 - Dario Ferreira Sanchez, Shay Reboh, Monica Larissa Djomeni Weleguela, Jean-Sébastien Micha, Odile Robach, Thierry Mourier, Patrice Gergaud, Pierre Bleuet:
In-situ X-ray μLaue diffraction study of copper through-silicon vias. 78-84 - H. Zaka, S. S. Shenouda, S. S. Fouad, M. Medhat, G. L. Katona, Attila Csík, G. A. Langer, Dezsö Laszlo Beke:
Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu-Sn bilayers at room temperature. 85-92 - Luka Kljucar, Mario Gonzalez, Ingrid De Wolf, Kristof Croes, Jürgen Bömmels, Zsolt Tökei:
Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line. 93-100 - Ling Xu, Miaocao Wang, Yang Zhou, Zhengfang Qian, Sheng Liu:
An optimal structural design to improve the reliability of Al2O3-DBC substrates under thermal cycling. 101-108 - Oleksandr Glushko, Megan J. Cordill, Andreas Klug, Emil J. W. List-Kratochvil:
The effect of bending loading conditions on the reliability of inkjet printed and evaporated silver metallization on polymer substrates. 109-113 - Anniina Parviainen, Kati Kokko, Laura Frisk:
Corrosion testing of anisotropic conductive adhesive interconnections on FR4, liquid crystal polymer and polyimide substrates. 114-120 - Dominique Ortolino, Jaroslaw Kita, Karin Beart, Roland Wurm, S. Kleinewig, A. Pletsch, Ralf Moos:
Failure of electrical vias manufactured in thick-film technology when loaded with short high current pulses. 121-128 - Shuangxi Sun, Si Chen, Xin Luo, Yifeng Fu, Lilei Ye, Johan Liu:
Mechanical and thermal characterization of a novel nanocomposite thermal interface material for electronic packaging. 129-135 - Muhannad Mustafa, Jeffrey C. Suhling, Pradeep Lall:
Experimental determination of fatigue behavior of lead free solder joints in microelectronic packaging subjected to isothermal aging. 136-147 - Hong Gao, Wenguo Zhang, Zhe Zhang, Li-Lan Gao, Gang Chen:
Study on fatigue life and electrical property of COG assembly under thermal-electric-mechanical coupled loads. 148-154 - Adeline B. Y. Lim, Wei Jian Neo, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen:
Evaluation of the corrosion performance of Cu-Al intermetallic compounds and the effect of Pd addition. 155-161 - Karel Dusek, David Busek:
Problem with no-clean flux spattering on in-circuit testing pads diagnosed by EDS analysis. 162-169 - Aizat Abas, Muhammad Hafifi Hafiz Ishak, Mohd Zulkifly Abdullah, F. Che Ani, Soon Fuat Khor:
Lattice Boltzmann method study of bga bump arrangements on void formation. 170-181 - Yi Wan, Hailong Huang, Diganta Das, Michael G. Pecht:
Thermal reliability prediction and analysis for high-density electronic systems based on the Markov process. 182-188 - Rimpy Bishnoi, Vijay Laxmi, Manoj Singh Gaur, Mark Zwolinski:
Resilient routing implementation in 2D mesh NoC. 189-201 - Nikolaos Eftaxiopoulos, Nicholas Axelos, Kiamal Z. Pekmestzi:
Low latency radiation tolerant self-repair reconfigurable SRAM architecture. 202-211 - Milos Krstic, Stefan Weidling, Vladimir Petrovic, Egor S. Sogomonyan:
Enhanced architectures for soft error detection and correction in combinational and sequential circuits. 212-220 - Mustafa Demirci, Pedro Reviriego, Juan Antonio Maestro:
Implementing Double Error Correction Orthogonal Latin Squares Codes in SRAM-based FPGAs. 221-227
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