"(Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM."

David E. Kotecki et al. (1999)

> Home

Details and statistics

DOI: 10.1147/RD.433.0367

access: closed

type: Journal Article

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ibmrd/KoteckiBSLSLSACDGKPWW99
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ibmrd/KoteckiBSLSLSACDGKPWW99
David E. Kotecki, John D. Baniecki, Hua Shen, Robert B. Laibowitz, Katherine L. Saenger, Jingyu Jenny Lian, Thomas M. Shaw, Satish D. Athavale, Cyril Cabral Jr., Peter R. Duncombe, Martin Gutsche, Gerhard Kunkel, Young-Jin Park, Yun-Yu Wang, Richard Wise:
(Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM. IBM J. Res. Dev. 43(3): 367-382 (1999)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.