"Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS ..."

Marc Porti et al. (2004)

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DOI: 10.1016/J.MICROREL.2004.07.030

access: closed

type: Journal Article

metadata version: 2020-02-22

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Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44(9-11): 1523-1528 (2004)

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