"DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: ..."

Giovanni Verzellesi et al. (2005)

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DOI: 10.1016/J.MICROREL.2005.07.064

access: closed

type: Journal Article

metadata version: 2024-05-07

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Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. Microelectron. Reliab. 45(9-11): 1585-1592 (2005)

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