IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL
Takashi MORIYuuki SATOHitoshi KAWAGUCHI
Author information
JOURNAL RESTRICTED ACCESS

2009 Volume E92.C Issue 7 Pages 957-963

Details
Abstract

Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.

Content from these authors
© 2009 The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top