Silicon Based Millimeter Wave and THz ICs

Jixin CHEN; Wei HONG; Hongjun TANG; Pinpin YAN; Li ZHANG; Guangqi YANG; Debin HOU; Ke WU

doi:10.1587/transele.E95.C.1134

Special Section on Recent Trends of Microwave Systems and Their Fundamental Technologies

Silicon Based Millimeter Wave and THz ICs

Jixin CHEN, Wei HONG, Hongjun TANG, Pinpin YAN, Li ZHANG, Guangqi YANG, Debin HOU, Ke WU

Author information

Jixin CHEN
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Wei HONG
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Hongjun TANG
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Pinpin YAN
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Li ZHANG
Institute of RF- & OE-ICs, School of Information Science and Engineering, Southeast University
Guangqi YANG
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Debin HOU
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University
Ke WU
Poly-Grames Research Center, Ecole Polytechnique, University of Montreal

Keywords: millimeter wave, THz, amplifiers, mixers, oscillators, substrate integrated waveguide (SIW), half mode SIW (HMSIW)

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2012 Volume E95.C Issue 7 Pages 1134-1140

DOI https://doi.org/10.1587/transele.E95.C.1134

Details

Abstract

In this paper, the research advances in silicon based millimeter wave and THz ICs in the State Key Laboratory of Millimeter Waves is reviewed, which consists of millimeter wave amplifiers, mixers, oscillators at Q, V and W and D band based on CMOS technology, and several research approaches of THz passive ICs including cavity and filter structures using SIW-like (Substrate Integrated Waveguide-like) guided wave structures based on CMOS and MEMs process. The design and performance of these components and devices are presented.

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