Search Results (362)

Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation anode material for lithium-ion batteries (LIBs). To address this, cobalt (Co)-doped GaN (Co-GaN) nanowires have been designed and synthesized by utilizing the chemical vapor deposition (CVD) strategy. The structural characterizations indicate that the doped Co elements in the GaN nanowires exist as Co²⁺ rather than metallic Co. The Co²⁺ prominently promotes electrical conductivity and ion transfer efficiency in GaN. The cycling capacity of Co-GaN reached up to 495.1 mA h g⁻¹ after 100 cycles. After 500 cycles at 10 A g⁻¹, excellent cycling capacity remained at 276.6 mA h g⁻¹. The intimate contact between Co-GaN nanowires and carbon paper enhances the conductivity of the composite. Density functional theory (DFT) calculations further illustrated that Co substitution changed the electron configuration in the GaN, which led to enhancement of the electron transfer efficiency and a reduction in the ion diffusion barrier on the Co-GaN electrode. This doping design boosts the lithium-ion storage performance of GaN as an advanced material in lithium-ion battery anodes and in other electrochemical applications. Full article

This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) systems, and military radar applications. The demand for high-frequency, high-power amplifiers is growing, driven by the global expansion of high-speed data communication and enhanced national security requirements. First, we compare the main GaN HEMT process technologies employed in Ku-band HPA development, categorizing the HPAs into monolithic microwave integrated circuits (MMICs) and internally matched power amplifier modules (IM-PAMs) and examining their respective characteristics. Then, by reviewing the literature, we explore design topologies, major issues like oscillation prevention and bias circuits, and heat sink technologies for thermal management. Our findings indicate that silicon carbide (SiC) substrates with gate lengths of 0.25 μm and 0.15 μm are predominantly used, with ongoing developments enabling MMICs and IM-PAMs to achieve up to 100 W output power and 30% power-added efficiency. Notably, the performance of MMIC power amplifiers is advancing more rapidly than that of IM-PAMs, highlighting MMICs as a promising direction for achieving higher efficiency and integration in future Ku-band applications. This paper can provide insights into the overall key technologies for Ku-band GaN HPA design and future development directions. Full article

As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high-electron mobility transistors (HEMTs), has attracted considerable attention. However, the ‘self-heating effect’ of GaN HEMTs represents a significant limitation regarding both performance and reliability. Diamond, renowned for its exceptional thermal conductivity, represents an optimal material for thermal management in HEMTs. This paper proposes a novel method for directly depositing diamond films onto N-polar GaN (NP-GaN) epitaxial layers. This eliminates the complexities of the traditional diamond growth process and the need for temporary substrate steps. Given the relative lag in the development of N-polar material growth technologies, which are marked by surface roughness issues, and the recognition that the thermal boundary resistance (TBR_GaN/diamond) represents a critical factor constraining efficient heat transfer, our study has introduced a series of optimizations to enhance the quality of the diamond nucleation layer while ensuring that the integrity of the GaN buffer layer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed to effectively reduce the surface roughness of the NP-GaN base, thereby providing a more favorable foundation for diamond growth. The optimization trends observed in the thermal performance test results are encouraging. Integrating diamond films onto highly smooth NP-GaN epitaxial layers demonstrates a reduction in TBR_GaN/diamond compared to that of diamond layers deposited onto NP-GaN with higher surface roughness that had undergone no prior process treatment. Full article

This paper proposes a gallium nitride (GaN)-based very-high-frequency (VHF) resonant flyback converter with integrated magnetics, which utilizes the parasitic inductance and capacitance to reduce the passive components count and volume of the converter. Both the primary leakage inductance and the secondary leakage inductance of the transformer are utilized as the resonance inductor, while the parasitic capacitance of the power devices is utilized as the resonance capacitor. An analytical circuit model is proposed to determine the electrical parameters of the transformer so as to achieve zero voltage switching (ZVS) and zero current switching (ZCS). Furthermore, an air-core transformer was designed using the improved Wheeler’s formula, and finite element analyses were carried out to fine-tune the structure to achieve the accurate design of the electrical parameters. Finally, a 30 MHz, 15 W VHF resonant flyback converter prototype is built with an efficiency of 83.1% for the rated power. Full article

The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 10⁹/cm² is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W. Full article

It is expected that two-dimensional (2D) metal nitrides (MNs) consisting of the 13th group elements of the periodic table and nitrogen, namely aluminium nitride (AlN), gallium nitride (GaN), indium nitride (InN) and thallium nitride (TlN), have enhanced physical and mechanical properties due to the honeycomb, graphene-like atomic arrangement characteristic of these compounds. The basis for the correct design and improved performance of nanodevices and complex structures based on 2D MNs from the 13th group is an understanding of the mechanical response of their components. In this context, a comparative study to determine the elastic properties of metal nitride nanosheets was carried out making use of the nanoscale continuum modelling (or molecular structural mechanics) method. The differences in the elastic properties (surface shear and Young’s moduli and Poisson’s ratio) found for the 2D 13th group MNs are attributed to the bond length of the respective hexagonal lattice of their diatomic nanostructure. The outcomes obtained contribute to a benchmark in the evaluation of the mechanical properties of AlN, GaN, InN and TlN monolayers using analytical and numerical approaches. Full article

In this paper, a four-stage gallium nitride (GaN) low noise amplifier (LNA) using coupled-line (CL) feedback in a 0.15-μm GaN-on-SiC process is proposed. The electromagnetic coupling feedback between the drain and source of each transistor is employed to generate an additional signal path for neutralization, which enhances gain and improves stability performance. A series transmission line-capacitor-transmission line (TL-C-TL) network is introduced between stages of the LNA for wider band interstage matching. The measured results show that the designed LNA achieves a 3-dB bandwidth of 23.6 to 29.8 GHz, a peak gain of 23.7 dB at 25.8 GHz, and a minimum noise figure (NF) of 2.2 dB at 27.8 GHz. The output-referred 1-dB compression point (OP1dB) is 13 dBm. The total power consumption of the LNA is 200 mW. Full article

In the rapidly advancing field of 5G technology, efficient thermal management is essential for enhancing the performance and reliability of high-power-density integrated circuits (ICs). This paper introduces an innovative approach to cooling these critical components, significantly surpassing traditional methods. Our design optimizes heatsink and fan configurations through systematic experimentation, varying fin shapes, heatsink dimensions, and fan speeds. The results demonstrate that fan velocity is the most critical factor in reducing IC temperatures, as increased airflow dramatically lowers thermal output. Expanding the heatsink surface area further improves heat dissipation by enhancing airflow interaction, while a larger copper heatsink boosts thermal conduction, effectively reducing the final IC temperature. These optimizations streamline the cooling process, minimizing the need for more complex and expensive equipment. This research sets a new benchmark in thermal management, fostering the development of more efficient and reliable electronic systems in the era of advanced wireless communications. Our approach brings a new dimension to existing research by focusing on the optimization of heatsink and airflow designs specifically for ICs. While previous studies have explored broader thermal management strategies, our work addresses specific challenges in heat dissipation by refining geometric configurations and fan speed adjustments. These optimizations result in measurable improvements in both efficiency and scalability, particularly within the context of high-power 5G systems. Full article

Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMTs is significantly influenced by the interfacial states of the AlGaN barrier, and gate annealing has emerged as a key process for reducing leakage currents and enhancing DC/RF characteristics. This research investigates the impact of gate annealing on AlGaN/GaN HEMTs, focusing on two main aspects: leakage current reduction and improvements in DC and RF efficiency. Through comprehensive electrical analysis, including DC and RF measurements, the effects of gate annealing were experimentally evaluated. The results show a significant reduction in gate leakage current and noticeable improvements in DC/RF performance for the devices that underwent gate annealing. The study confirms that the annealing process can effectively enhance device performance by modifying the material properties at the gate interface. Full article

Electronic power converters are widespread and crucial components in modern energy scenarios. Beyond mere electrical energy conversion, their electronic structure allows several functionalities to be naturally embedded in them, including energy management, diagnosis, communication, etc. The operation of the converter itself, or the system interfaced by the same, commonly produces undesired electromagnetic interferences (EMIs) that should comply with prescribed limits. This paper presents a digital active EMI filter designed to mitigate such disturbances. The proposed hardware implementation can acquire and analyze the common-mode (CM) noise affecting the circuit and inject a compensation signal to attenuate the measured interference. A novel adaptive algorithm is introduced to compute the necessary signals for effective noise cancellation. The implementation is integrated within a single printed circuit board interfaced with a field-programmable gate array (FPGA) running the control algorithm. The digital filter’s efficacy in EMI reduction is demonstrated using a synchronous buck converter with gallium nitride (GaN) power devices, achieving significant noise reduction. Additionally, potential functionalities are envisioned to fully exploit the capabilities of the proposal beyond EMI filtering, like fault detection, predictive maintenance, smart converter optimization, and communication. Full article

This paper presents the theory, design, and application of a dual-branch series-diode analog pre-distortion (APD) linearizer to improve the linearity and efficiency of a K-band high-power amplifier (HPA). A first-of-its-kind, frequency-dependent large-signal APD model is presented. This model is used to evaluate different phase relationships between the linear and nonlinear branches, suggesting independent gain and phase expansion characteristics with this topology. This model is used to assess the impact of diode resistance, capacitance, and ideality factors on the APD characteristics. This feature is showcased with two similar GaAs diodes to find the best fit for the considered HPA. The selected diode is characterized and modeled between 1 and 26.5 GHz. A comprehensive APD design and simulation workflow is reported. Before fabrication, the simulated APD is evaluated with the measured HPA to verify linearity improvements. The APD prototype achieves a large-signal bandwidth of 6 GHz with 3 dB gain expansion and 8° phase rotation. This linearizer is demonstrated with a 17–21 GHz GaN HPA with 41 dBm output power and 35% efficiency. Using a wideband 750 MHz signal, this APD improves the noise–power ratio (NPR) by 6.5–8.2 dB over the whole HPA bandwidth. Next, the HPA output power is swept to compare APD vs. power backoff for the same NPR. APD improves the HPA output power by 1–2 W and efficiency by approximately 5–9% at 19 GHz. This efficiency improvement decreases by only 1–2% when including the APD post-amplifier consumption, thus suggesting overall efficiency and output power improvements with APD at K-band frequencies. Full article

Low light extraction efficiency (LEE) remains a critical bottleneck in the performance of contemporary micro-light-emitting diodes (micro-LEDs). This study presents an innovative approach to improve the LEE of Gallium nitride (GaN)-based thin-film flip-chip (TFFC) micro-LEDs by integrating an inclined sidewall with photonic crystals (PhCs). Three-dimensional finite-difference time-domain (FDTD) simulations reveal that the inclined sidewall design significantly increases the escape probability of light, thereby improving LEE. Additionally, the PhCs’ structure further improves LEE by enabling more light to propagate into the escape cones through diffraction. Optimal results are achieved when the inclined sidewall angle (θ) is 28° and the PhCs exhibit a period (a) of 220 nm, a filling factor (f) of 0.8, and a depth (d) of 3 μm, resulting in a maximum LEE of 36.47%, substantially surpassing the LEE of conventional planar TFFC micro-LEDs. These results provide valuable design guidelines for the development of high-efficiency GaN-based micro-LEDs. Full article

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices. Full article

The impact of wet treatment using an (NH₄)₂S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance (ρ_c < 1 × 10⁻⁴ Ω·cm²) was achieved with samples treated with an (NH₄)₂S-isopropanol solution, whereas the highest resistivity (ρ_c = 3.3 × 10⁻⁴ Ω·cm²) and surface roughness (R_a = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N₂ + O₂ + H₂O atmosphere caused degradation through species inter-diffusion and metal-metal solid solution formation, irrespective of the preparation method. Standard prepared substrates developed a thin GaN-Au intermediate layer at the interface after heat treatment. Enhanced adhesion and the absence of GaN decomposition were observed in samples additionally cleaned with the (NH₄)₂S-solvent solution. Complete oxidation of nickel to NiO was observed in samples that underwent additional sulfur solution treatment. The intensity of metal species mixing and nickel oxidation was influenced by the metal diffusion rate and was affected by the initial state of the GaN substrate obtained through different wet treatment methods. Full article

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal phase have been extensively studied over the past 30 years and have allowed the development of blue-ray lasers, which are essential disruptive developments. In addition to high-efficiency white light-emitting diodes, which have revolutionized lighting technologies and generated a great industry around these semiconductors, several transistors have been developed that take advantage of the characteristics of these semiconductors. These include power transistors for high-frequency applications and high-power transistors for power electronics, among other devices, which have far superior achievements. However, less effort has been devoted to studying GaN and InGaN alloys grown in the cubic phase. The metastable or cubic phase of III-N alloys has superior characteristics compared to the hexagonal phase, mainly because of the excellent symmetry. It can be used to improve lighting technologies and develop other devices. Indium gallium nitride, In_xGa_1−xN alloy, has a variable band interval of 0.7 to 3.4 eV that covers almost the entire solar spectrum, making it a suitable material for increasing the efficiencies of photovoltaic devices. In this study, we successfully synthesized high-quality cubic InGaN films on MgO (100) substrates using plasma-assisted molecular beam epitaxy (PAMBE), demonstrating tunable emissions across the visible spectrum by varying the indium concentration. We significantly reduced the defect density and enhanced the crystalline quality by using an intermediate cubic GaN buffer layer. We not only developed a heterostructure with four GaN/InGaN/GaN quantum wells, achieving violet, blue, yellow, and red emissions, but also highlighted the immense potential of cubic InGaN films for high-efficiency light-emitting diodes and photovoltaic devices. Achieving better p-type doping levels is crucial for realizing diodes with excellent performance, and our findings will pave the way for this advancement. Full article