| abstract |
The present invention relates to by when producing optoelectronic device by the preparaton coated substrate of silicon-containing compound, such as when producing solar cell, reduce or eliminate the method for gap shifts, described preparation comprises step below: wherein use liquid silane preparaton coated substrate, wherein the invention is characterized in, described preparaton is in addition containing at least one germanium compound.The invention still further relates to the preparation method of such optoelectronic device. |