| abstract |
The present invention provides a composition for forming a resist protective film for lithography, and a method for forming a pattern of a semiconductor element using the same, wherein the composition includes a polymer whose side chain includes a repeating unit having a fluorine-containing functional group and a solvent, wherein the polymer has a weight average molecular weight of 2,000-100,000, and based on 100 parts by weight of the total solvent, the solvent contains 10-100 parts by weight of substances with a Hildebrand solubility parameter of 12.5-22.0. |