| abstract |
The technical problem to be solved by the present invention is to provide a new technology for manufacturing a SiC substrate which can reduce the material loss when removing the strained layer. The present invention is a method of manufacturing a SiC substrate (30), comprising: a strained layer thinning step (S1) of making the strained layer (12) of the SiC substrate body (10) move to the surface side (12) THINKS. In this way, by including the strained layer thinning step (S1) for moving (concentrating) the strained layer (12) to the surface side, the material loss (L) when removing the strained layer (12) can be reduced. |