| abstract |
The invention relates to an inexpensive and reliably producible mask for X-ray lithography, in particular for the production of VLSI semiconductor components. The mask is intended to transfer absorber structures down to the submicron range. Lateral mechanical distortions are avoided 'by a stress-compensated support membrane made of B- and Ge-doped silicon simultaneously. This carrier membrane is also optically more transparent compared to known only B-doped Si membranes, which facilitates optical adjustment of the mask. |