http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0310183-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2060efca39de37c18aea5b96c97db0b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b8b744d430e252fa21c14c2b8dee176 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| filingDate | 1988-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fd2520ae54d4a7b02c5243ac8fab80f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a46a5f250de0f34fe6ba632cc1a2a49f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b243fa70b777a00abda8eb45fccf150c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9981dfc4406d4b77b4ca044855bf11f9 |
| publicationDate | 1989-04-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0310183-A2 |
| titleOfInvention | Fabrication process of a SiC mask support for X-ray lithography |
| abstract | a) Abscheidung der SiC-Schicht, wobei die Silicium-Einkristallscheibe in der für den Abscheidungsprozeß vorgesehenen Vorrichtung zunächst auf eine Temperatur im Bereich von 1000 bis 1350 °C unter einer H₂-Atmosphäre aufgeheizt wird, danach mit einem geeigneten Ätzmittel angeätzt wird, danach unter Einfluß von H₂ gespült wird und anschließend die SiC-Schicht aus einer Silicium und Kohlenwasserstoffe enthaltenden Gasatmosphäre angebracht wird, wonach das beschichtete Substrat auf Raumtemperatur unter H₂-Atmosphäre abgekühlt wird und b) Implantation von Ionen in die SiC-Schicht zur mechanischen Störung der Kristallstruktur der SiC-Schicht. Method for producing a mask carrier (membrane) made of SiC for X-ray lithography masks, wherein an SiC layer is deposited on at least one of the two main surfaces of the silicon single crystal wafer by means of chemical vapor deposition (CVD) on a substrate in the form of a silicon single crystal wafer, after which the silicon single crystal wafer is removed except for an edge region in a selective etching step, the following method steps being used: a) deposition of the SiC layer, the silicon single crystal wafer in the device provided for the deposition process being first heated to a temperature in the range from 1000 to 1350 ° C. under an H₂ atmosphere, then etched with a suitable etchant, then under Influence of H₂ is flushed and then the SiC layer from a silicon and hydrocarbon-containing gas atmosphere is applied, after which the coated substrate is cooled to room temperature under an H₂ atmosphere and b) implantation of ions in the SiC layer for mechanical disturbance of the crystal structure of the SiC layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0372645-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0372645-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0435128-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0332130-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0332130-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5082695-A |
| priorityDate | 1987-10-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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