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filingDate 1994-04-27^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f308beb5483192a00da6fed280e4ba1a
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publicationDate 1994-11-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0622858-A2
titleOfInvention Gallium nitride-based III-V group compound semiconductor device and method of producing the same
abstract A gallium nitride-based III-V Group compound semiconductor device (10) has a gallium nitride-based III-V Group compound semiconductor layer (13) provided over a substrate (11), and an ohmic electrode (15) provided in contact with the semiconductor layer (13). The ohmic electrode (15) is formed of a metallic material, and has been annealed.
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