| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32eb7df78d0a2e73a5abca32fb987566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a62c4f722c502d9cdaf5618705ffa94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_914c822d99d3b79b5eb88de64dde90f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f82b25001b8c64e3b2c05b4e3dd4a3c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf5d46653a85bf9e8a70dd392afa03fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e57ba21dde0334f61d4f11d16ae841d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e448b4420b0df511d02d7cfaccfdb0d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
2003-06-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5de60fa7abe597cc93296081fa9d7af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5998f7be9201eb11df4b9e57c995cb75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ec4e59b9fbdb0dc3b5899bc8df36b3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8e5b9e07b393fe8840732f1f2c4daac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ef2a44e542a0fa789d2b0f9fa627873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d0a03f3519a9ffa3891a3022d21d8ed |
| publicationDate |
2004-09-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03107442-A3 |
| titleOfInvention |
ELECTRODE FOR P-TYPE GALLIUM NITRIDE SEMICONDUCTORS |
| abstract |
The invention relates to an improved electrode for a p-type gallium nitride semiconductor material. This electrode comprises a layer of oxidized metal and a first and a second layer of metallic material. The electrode is formed by depositing at least three metal layers on the p-type semiconductor layer so that at least one metal layer is in contact with the p-type semiconductor layer. At least two metal layers are then subjected to the annealing treatment in the presence of oxygen to oxidize at least one metal layer to form a metal oxide. The electrodes provide p-type gallium nitride semiconductor materials with good ohmic contact and therefore reduce the operating voltage of gallium nitride semiconductor devices. |
| priorityDate |
2002-06-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |