| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5a1222933f866ef63d7e1f537a7228c2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 |
| filingDate |
1994-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_645b1645a39d5f22b2cc1ffc4b6c23e4 |
| publicationDate |
1995-11-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0681743-A1 |
| titleOfInvention |
Plasma deposition process with substrate temperature control |
| abstract |
In a glow discharge deposition process for the preparation of hydrogenated, Group IV semiconductor alloys, the substrate is maintained at a temperature which is positively correlated with the deposition rate and which is high enough to impart sufficient kinetic energy to the layer to activate the removal of undesirable morphologies, but low enough to prevent degradation of the layer caused by the excessive loss of hydrogen. |
| priorityDate |
1993-11-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |