| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-052 |
| filingDate |
1996-09-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7741a0bda695a04ea5c7fffb686d7a52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c2443758d5ae056b1d0eb073964c060 |
| publicationDate |
1997-04-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0766321-A1 |
| titleOfInvention |
Method of producing a photovoltaic device |
| abstract |
A method for producing a photovoltaic device comprises a base member (190) comprising a substrate (100) and a superposingly formed thereon a reflecting layer (101) and a reflection enhancing layer (102), and a pin structure formed of an n-type (103), i-type (104) and p-type (105) semiconductor layers containing silicon atoms and being non-single crystal as crystal structure, the pin structure being repeated at least once on said base member. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200 to 500°C to form the reflecting layer; (b) lowering after the step (a) the substrate temperature to 100°C or below; and (c) depositing after the step (b) a material constituting the reflection enhancing layer, on the reflecting layer at a substrate temperature of from 200 to 400°C to form the reflection enhancing layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1079422-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1079422-A3 |
| priorityDate |
1995-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |