http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0969523-A2

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filingDate 1999-06-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e26ae2847f5737d3525e8fcaae4bac4
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publicationDate 2000-01-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0969523-A2
titleOfInvention Photovoltaic device and process for producing the same
abstract A photovoltaic device have a pin junction of a p-layer,nan i-layer and an n-layer, wherein the p-layer includes a firstnp-layer and a second p-layer thereover, the first p-layer having anthickness of 5nm or less and being uniformly doped with a p-typenimpurity, and the second p-layer being formed byndecomposition of a gas which does not positively incorporate anp-type impurity.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2017895-A3
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priorityDate 1998-06-12^^<http://www.w3.org/2001/XMLSchema#date>
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