abstract |
A photovoltaic device have a pin junction of a p-layer,nan i-layer and an n-layer, wherein the p-layer includes a firstnp-layer and a second p-layer thereover, the first p-layer having anthickness of 5nm or less and being uniformly doped with a p-typenimpurity, and the second p-layer being formed byndecomposition of a gas which does not positively incorporate anp-type impurity. |