http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1320902-A4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3310ea86f3c492f6c09d7be6592866d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2988713e9c22130a40f88f173c348be |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2001-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d3059d8e9e14b7384545c907afb9cb6 |
| publicationDate | 2006-10-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1320902-A4 |
| titleOfInvention | SEMICONDUCTOR LIGHT EMITTING LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCTION |
| abstract | The present invention provides a semiconductor device with InxGal-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface and boundary of a device and a pn-junction boundary, and enhances the light emission efficiency as forming new structural semiconductor devices by removing the conventional dielectric passivation layer and using InxGal-xN crystal layer instead. A semiconductor device with gallium nitride type crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms an InxGal-xN crystal passivation layer with a specified thickness and a width around the edge of the upper surface of p-GaN layer which is the top layer of the semiconductor device. |
| priorityDate | 2000-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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