http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09307141-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 |
| filingDate | 1996-05-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95c375c7de776404270be4ef316b8977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_359111b3bcff90e04828d04d31cce88b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb6752f5116fe05ea1084177ffc35b3 |
| publicationDate | 1997-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09307141-A |
| titleOfInvention | Group III nitride semiconductor light emitting device |
| abstract | (57) Abstract: To facilitate manufacturing without deteriorating element characteristics and to improve electrostatic breakdown voltage. At least a p-layer and an n-layer made of a group III nitride semiconductor are laminated, and a part of an upper layer 71, 71, 6, 5, 4, is removed, and a part of a lower current supply layer 3 is removed. Exposed The electrodes 8 and 10 are formed on the exposed portions of the uppermost layer 71 and the current supply layer 3. In the light emitting device 100 having the above-mentioned structure, the protective film 11 having a specific resistance of 0.1 Ωcm to 1 × 10 5 Ωcm was formed on the surface of the light emitting device. The protective film 11 is obtained by applying a solution in which a metal alcoholate (M-OR) or a silicon compound is dissolved in an organic solvent or water, followed by heating and drying. It can be formed at low temperature and is easy to manufacture. Further, since the specific resistance is sufficiently lower than the non-resistance of a perfect insulator, the electrostatic breakdown voltage can be improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0221605-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7053417-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1320902-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1320902-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013180204-A1 |
| priorityDate | 1996-05-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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