http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1735826-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48ec3faf180c7f4efeed5211d0c9fdef |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2005-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5141733c1a0e01b200a26e11ab005d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8dd69398818a9829385e7e8f0b4a068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edac6d014aba397132fbd557dc1103a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a580de61c417b645af74f50f6e580ee0 |
| publicationDate | 2006-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1735826-A2 |
| titleOfInvention | Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive |
| abstract | A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate. |
| priorityDate | 2004-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 43 of 43.