| abstract |
Gate-all-around integrated circuit structures having high mobility, and methods of fabricating gate-all-around integrated circuit structures having high mobility, are described. For example, an integrated circuit structure includes a silicon nanowire (504) or nanoribbon. A gate stack (508, 506) is around the silicon nanowire or nanoribbon, the gate stack including a compressively stressing gate electrode (506). A first N-type epitaxial source or drain structure (514) is at a first end of the silicon nanowire or nanoribbon. A second N-type epitaxial source or drain structure (516) is at a second end of the silicon nanowire or nanoribbon. The silicon nanowire or nanoribbon has a <110> plane between the first N-type epitaxial source or drain structure and the second N-type epitaxial source or drain structure. |