http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| level | 14^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L2029/7858 |
| modified | 2013-01-01^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
Incoming Links
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