http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1045515-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3492a7406879265b1f567f37d98dbbaf |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D11-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D11-32 |
| filingDate | 1965-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1966-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1045515-A |
| titleOfInvention | Electrolyte and diffusion process |
| abstract | A phosphorus-containing oxide film is grown on the surface of a semi-conductor wafer by anodization in the presence of an electrolyte comprising pyrophosphoric acid. The preferred electrolyte is a solution of pyrophosphoric acid (2 to 25 volume per cent, preferably between 12 and 18 volume per cent) in tetrahydrofurfuryl alcohol with an applied voltage of up to about 150 volts. The geometry of the oxide film produced is controlled by illumination during the anodizing operation, which is preceded by an etch in a mixture of nine parts nitric acid and one part hydrofluoric acid. Blue light is preferred for front surface illumination and white or other light for back surface illumination, in which case the semi-conductor material may be webbed dendritic silicon prepared as described in Specification 938,915. One electrode may be of platinum and the other of a low work-function metal such as aluminium or zinc, and the tank and the support for the semi-conductor wafer may be of glass, plastic, ceramic, or other electrically non-conducting material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5911864-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9819827-A1 |
| priorityDate | 1964-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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