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filingDate 1995-03-24^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13869dd74542c87eb18933e85538bb19
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publicationDate 1996-09-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber IT-RM950184-A1
titleOfInvention PROCEDURE TO IMPROVE THE PERFORMANCE OF AMORPHOUS SILICON-BASED DEVICES SUCH AS SOLAR CELLS, OBTAINED BY PLASMA DEPOSITION
abstract Stable, high quality, electronic and photovoltaic amorphous silicon-based devices, which effectively resist light-induced degradation and current-induced degradation, produced by means of a special plasma deposition process. Powerful and efficient single junction and multiple junction solar cells with high open circuit voltages and high filling factors and with wider band intervals can be economically manufactured with the special plasma deposition process. The preferred method comprises a silane glow discharge at high pressure, at a relatively low temperature, in the presence of a high concentration of hydrogen gas.
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