http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005026602-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2003-07-01^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92792f7c8caaf1ce615de0987f2ec222
publicationDate 2005-01-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005026602-A
titleOfInvention Exhaust treatment device and growth device
abstract PROBLEM TO BE SOLVED: To provide an exhaust treatment apparatus capable of effectively exhausting two or more kinds of gases, and a growth apparatus provided with the exhaust treatment apparatus and capable of using plural kinds of gases. An exhaust treatment apparatus includes a first exhaust pipe for exhausting ammonia and a second exhaust pipe for exhausting dimethylhydrazine. A first detoxification processing unit 42A for detoxifying ammonia is provided in the middle of the first exhaust pipe 42, and a second detoxification processing unit 43A for detoxifying dimethylhydrazine is provided in the middle of the second exhaust pipe 43. Is provided. Ammonia and dimethylhydrazine are switched and supplied to the reaction tube 11 to grow a nitride III-V compound semiconductor. The first exhaust pipe 42 and the second exhaust pipe 43 are switched by the switching unit 44 in accordance with switching between ammonia and dimethylhydrazine. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011041894-A
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priorityDate 2003-07-01^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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