| abstract |
A resist composition used in a semiconductor manufacturing process such as an IC, a circuit board such as a liquid crystal or a thermal head, and other photofabrication processes, and a pattern forming method using the resist composition. A resist composition excellent in sensitivity and outgas characteristics, and a pattern forming method using the resist composition are provided. A resist composition comprising a sulfonium salt (A) represented by general formula (I), a compound used in the resist composition, and a pattern forming method using the resist composition. [Chemical 1] In general formula (I), R 1 to R 9 , Z, and X n− represent a predetermined atom, group, and anion, and n and m represent a predetermined number. [Selection figure] None |