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filingDate 2007-07-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4f490ad7339cdfc6215f755e4fb03d
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publicationDate 2008-03-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008072094-A
titleOfInvention Semiconductor wafer polishing composition, method for producing the same, and polishing method
abstract Provided is a semiconductor wafer polishing composition that hardly causes particle contamination, particularly “abrasive grain residue”, in a flat portion of a wafer or the like when polishing a flat surface or an edge portion of a device wafer or the like. Colloidal silica stabilized by a quaternary ammonium base produced by an active silicate aqueous solution obtained by removing an alkali from an alkali silicate aqueous solution and a quaternary ammonium base, containing no alkali metal, 25 Contains a buffer solution combining a weak acid and a quaternary ammonium base having a reciprocal of the acid dissociation constant at ° C (pKa) of 8.0 to 12.5, and has a buffering action at 25 ° C between pH 8-11 A composition for polishing a semiconductor wafer. [Selection figure] None
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