| abstract |
At least selected from the group consisting of a photoresist, an antireflection film, and an etching residue at a low temperature for a short time without corroding an interlayer insulating film, metal, metal nitride, and alloy of an object to be peeled To provide a stripping solution capable of removing one deposit and a stripping method thereof. A semiconductor device stripping solution comprising an aqueous solution containing a quaternary ammonium hydroxide, an oxidizing agent, an alkanolamine, and an alkali metal hydroxide, and stripping for preparing the stripping solution A liquid preparation step, and a peeling step of removing at least one deposit selected from the group consisting of a photoresist, an antireflection film, and an etching residue by the stripping solution obtained by the stripping liquid preparation step. A peeling method characterized by the above. [Selection figure] None |