| abstract |
According to the present invention, there is provided a semiconductor device comprising a low-k film (low-k film), a dry etching residue on the surface of a semiconductor element having at least one selected from a material containing 10 atomic% or more of titanium and a material containing 10 atomic% And a cleaning liquid for removing the photoresist, comprising 0.002 to 50% by mass of at least one oxidizing agent selected from the group consisting of peroxide, perchloric acid and perchlorate, 0.001 to 5% by mass of an alkaline earth metal compound and water. can do. |