| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2010-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a3859d42c5414565a3144351d52a7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c976cd4fa4872cb72576567b4689919
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5609cc41201c1746aaf0ba338d67026 |
| publicationDate |
2011-04-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011071480-A |
| titleOfInvention |
Method for forming an electronic device |
| abstract |
A nanometer-scale feature size is achieved in a semiconductor device. A first layer of a first photosensitive composition comprising a first resin component and a first photoactive component is formed. The first layer is exposed to activating radiation through a patterned photomask 110 and developed to form a first resist pattern 112, and the first resist pattern is heat treated in a hard bake process Then, the hard-baked first resist pattern is processed with a substance effective for making the surface alkaline, and a second photosensitive component containing a second resin component and a photoacid generator and having a positive type. A second layer 114 of an etching composition is applied in contact with the alkaline surface of the first resist pattern, and the second layer is passed through a patterned photomask 116. Exposure to activating radiation, and developing the second layer has been exposed, BACKGROUND OF forming a second resist pattern 114 Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011209501-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877432-B2 |
| priorityDate |
2009-06-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |