| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2010-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af87f7f14f76735a6cd8f4c4a79a267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9673671fa8fa66b5b418ee1fd161fc3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1784d8d5536c8f0a015741a46eecbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a6564d37d593cb43a9d727ba2ef3bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f755c300b2571521cc9151a64d85c60 |
| publicationDate |
2011-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011209501-A |
| titleOfInvention |
Resist pattern forming method and resist composition |
| abstract |
In a resist pattern forming method in which a resist pattern is formed on a support by performing patterning twice or more using a chemically amplified resist composition, the second patterning is a first pattern formed by the first patterning. A resist pattern forming method capable of reducing damage to a resist pattern, and a resist composition useful for forming a first resist pattern in the resist pattern forming method. In the first patterning, a first resist pattern is formed using a resist composition containing a thermal base generator as a chemically amplified resist composition and before the second patterning. In addition, a hard baking process is performed in which the first resist pattern is baked under baking conditions in which a base is generated from the thermal base generator. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014235179-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014192768-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020092274-A |
| priorityDate |
2010-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |