| abstract |
An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (for example, a microcrystalline semiconductor film) having no voids between crystal grains. A pressure of a reaction gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between a first electrode and a second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm, preferably 4 mm to 16 mm. By supplying high-frequency power of 60 MHz or less to the first electrode, a plasma region is formed between the first electrode and the second electrode, and a crystalline semiconductor is formed in a gas phase including the plasma region. A deposition precursor is formed, a deposition precursor is deposited to form crystal nuclei of 5 nm to 15 nm, and a microcrystalline semiconductor film is formed by crystal growth from the crystal nuclei. [Selection] Figure 1 |