| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_915269922949d81a90260e5cd5d2df40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2010-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4cc66afc9d9ab0bbefc5ab62bea7b40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82ce292964ac106da29db5455d417fdd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a9bbf1810f6e1f2238c774c94a4259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68fb5a22dc0015572e254446fe62cf2c |
| publicationDate |
2011-08-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011155164-A |
| titleOfInvention |
Nitride semiconductor device and method for manufacturing nitride semiconductor device |
| abstract |
The present invention provides a nitride semiconductor device having a high heat dissipation property of a substrate and having few crystal defects in a nitride semiconductor layer formed on the substrate, and a manufacturing method thereof. [Solution] The manufacturing method of the HEMT 10 includes a film forming process for forming a GaN thin film 12 on the surface of the sapphire substrate 11, a groove forming process for forming a groove having a depth reaching the inside of the sapphire substrate 11 from the upper end of the thin film 12, and a groove forming process. After the step, a growth step of growing the GaN layer 13 using the thin film 12 as a seed crystal, and a filling step of filling the trench 17 with Au as a highly thermally conductive material having higher thermal conductivity than sapphire before or after the growth step And. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015193955-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112466942-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112466942-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015193955-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019169551-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016062956-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7137947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105140122-A |
| priorityDate |
2010-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |