| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 |
| filingDate |
2016-05-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eeaf5d8ff087dad9bf96f115bd49a20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36ba179bfecdcb92422c88cc7802cdb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7dcf1201e2c9e622b68a0bb81388261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61817c71c2cc7c72f81d798d9774bccf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34625e7faedbbefffc95a5005d715c4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_002e2003640b229c8ed5b48e1c668522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8b210a2d20cfa38e556b9bae4c0a6c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02046555288ea2c7a8025101a47cb6a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0e42ff02c22b865c2537ee03a7a13cb |
| publicationDate |
2017-01-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017008412-A |
| titleOfInvention |
Low fluorine tungsten deposition by sequential CVD process |
| abstract |
A method for forming a low stress tungsten film having a low fluorine content is provided. After the step (a) of depositing a tungsten nucleation layer by repeatedly exposing the substrate with alternating pulses of a reducing agent and a first tungsten-containing precursor for two or more cycles under a chamber pressure of 10 Torr or less. A method of forming a tungsten film comprising the step (b) of depositing bulk tungsten on the tungsten nucleation layer by exposing the substrate to alternating pulses of hydrogen and a second tungsten-containing precursor. And (c) further comprising depositing a second bulk tungsten layer by simultaneously exposing the substrate to the reducing agent and the third tungsten-containing precursor. A method wherein step (c) is performed every two or more cycles of step (b), wherein one cycle of step (b) includes a pulse of hydrogen and a pulse of a second tungsten-containing precursor. The method wherein the first tungsten-containing precursor is fluorine-free. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020526669-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102270458-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110678972-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190123804-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018184636-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021044929-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102426525-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200123863-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11401609-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020522877-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020033630-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7093888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7138518-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020020043-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111162039-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021520338-A |
| priorityDate |
2015-05-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |