| abstract |
PROBLEM TO BE SOLVED: To suppress nitriding of a first film or a second film and to form a silicon nitride film on a substrate in which a first film and a second film are exposed on the surface, and on the first film. And the step of supplying plasma-ized hydrogen gas to a substrate having a first film and a second film having different incubation times on the surface. , The step of supplying the processing gas composed of silicon halide to the substrate, the step of supplying the plasmatized hydrogen gas, and the step of supplying the processing gas are repeated in order to form the first film and the second film. A step of forming a thin layer of silicon to be coated, a step of supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate to form a thin layer of silicon nitride, a raw material gas, and a first The step of supplying the nitriding gas to the substrate and forming a silicon nitriding film on the thin layer of silicon nitriding is carried out. [Selection diagram] FIG. 9 |