| abstract |
The present invention relates to an atomic layer deposition method for improving the characteristics of a thin film in the formation of a silicon nitride film by atomic layer deposition in a low temperature region. In order to deposit a silicon nitride film on a substrate, a method of depositing a silicon nitride film on a substrate, such as MCS, DCS, HCDS A purge gas for purifying by-products and suppressing a gas phase reaction is provided by supplying a silicon precursor containing silicon and a gas such as nitrogen, hydrogen, or ammonia to the silicon precursor material adsorbed on the substrate in the reactor, A chlorine (Cl 2 ) and / or a chlorine plasma are post-treated in order to remove the hydrogen contained in the silicon nitride film and improve the thin film characteristics in the atomic layer deposition method of the silicon nitride film supplied alternately. |