| abstract |
PURPOSE: To suppress the possibility of breakdown to a lower degree and to improve response and integration density by providing a silicon nitride film having corrosion resistance against etching liquid for a semiconductor and an absorbing layer having a high infrared-ray absorbing rate. n CONSTITUTION: A sensor has a diaphragm structure and comprises the following parts: a silicon nitride film 2 which supports a semiconductor and a metal pattern 3, has corrosion resistance against silicon etching liquid and acts as a stopper; an absorbing layer 8 having a high absorbing rate for infrared rays on the surface of the device; an insulating film 4 which insulates said absorbing layer 8 and the pattern 3; and a silicon substrate 1 which supports the thin film comprising all four layers from the surrounding parts. As the absorbing layer 8, e.g. a gold-black film is used. A thermopile is formed with the pattern 3. Two kinds of thermoelectric materials 12 and 13 having the different thermoelectric functions are alternately connected through connecting point parts 14. The thermoelectric materials 12 and 13 are made to be a P-type polysilicon film and an N-type polysilicon film, respectively. n COPYRIGHT: (C)1990,JPO&Japio |