http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0291982-A

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filingDate 1989-08-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22ad63c60782f0680925b70bc6b6d111
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publicationDate 1990-03-30^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0291982-A
titleOfInvention High-frequency substrate material for thin film of laminated perovskite superconductor
abstract PURPOSE: To obtain an optimum substrate for the thin film characteristics of laminated perovskite superconductor by forming a wafer of a lanthanum aluminate. CONSTITUTION: A wafer formed of a pseudothreedimensional crystalline structured lanthanum alumina (LaAlO3 ) is provided with crystalline structure of laminated perovskite superconductor as well as crystalline structure and lattice constant precisely matching to the lattice constant. Accordingly, the epitaxial film growth of the superconductor is promoted to orient the crystal to the pertinent direction for the excellent superconductive characteristics in high critical current density, also the LaAlO3 is provided with the high-frequency characteristics in excellent low loss tangent and low dielectric constant at superconductive temperature as well as the space between superconductive layers is satisfactorily insulated so that the substrate having the optimum thin film characteristics of the laminated perovskite superconductor may be obtained.
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priorityDate 1988-08-18^^<http://www.w3.org/2001/XMLSchema#date>
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