http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0319382-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22
filingDate 1989-06-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8a8da80358fe17834248b3cf6d39d6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bd1ca391a376d61654e99264ca50a6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_985f90aa053a914ccbd893aa46a5e0db
publicationDate 1991-01-28^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0319382-A
titleOfInvention Tunnel junction type josephson element
abstract PURPOSE: To enable a Josephson current to be well observed at an operating temperature of 90K or above by a method wherein the first and the second superconductor layer of a tunnel junction type Josephson element are formed of oxide superconductor and a barrier layer is formed of lanthanum gallium oxide or lanthanum aluminum oxide. n CONSTITUTION: A first and a second superconductor layer are formed of LBa 2 Cu 3 O y (where y=6.8-7.0, L denotes an element selected from Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lm) and have a critical temperature of 90K or above. For instance, a superconductor layer 2 of YBa 2 Cu 3 O y (where y=6.8-7.0) formed on a substrate 1 of TiSrO 3 through an epitaxial growth method, a barrier layer 3 of LaGaO 3 formed extending thereon through an epitaxial growth method, and a superconductor layer 4 of YBa 2 Cu 3 O y (where y=6.8-7.0) formed extending thereon and facing the superconductor layer 2 through an epitaxial growth method are provided. n COPYRIGHT: (C)1991,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05167115-A
priorityDate 1989-06-16^^<http://www.w3.org/2001/XMLSchema#date>
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