| abstract |
(57) [Abstract] [Purpose] In a thin film forming apparatus used for depositing a thin film on an object to be processed by a vapor phase crystal growth method in a manufacturing process of semiconductor products, electronic parts, etc. An object is to provide a thin film forming apparatus capable of preventing reliquefaction. [Structure] The raw material gas introduction pipe is a double pipe of a raw material gas introduction inner pipe 11 and a raw material gas introduction outer pipe 12, and a liquid raw material vaporized by flowing a heated gas through the raw material gas introduction outer pipe 12 Prevent reliquefaction. |