http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0598456-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 |
| filingDate | 1991-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_718ebe19f0d93f9e6d41ebb7f7f0b923 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b24919cd84d6d9768eb5241eb0ec097b |
| publicationDate | 1993-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0598456-A |
| titleOfInvention | Plating film for electronic devices |
| abstract | (57) [Summary] [Purpose] To provide a plating film with excellent environmental resistance and suppress fluctuations in the operating voltage and resistance of electronic devices. [Structure] NiP electroless plating with a phosphorus content of 20 to 3 It is 5 atomic%. In order to increase the phosphorus content in the plating film, the composition of the plating solution and the plating conditions may be selected. For example, when a hypophosphite-reducing alkaline plating solution, particularly a caustic alkaline plating solution is used, a plating film having a relatively high phosphorus content is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5486721-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0621633-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0621633-A2 |
| priorityDate | 1991-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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