| abstract |
An object of the present invention is to provide a low-resistance ohmic electrode for a GaN-based semiconductor having a p-type conductivity and to reduce operating voltages of various devices using the semiconductor. SOLUTION: As an electrode for p-type GaN, an electrode structure composed of a Pt layer, a PtGa compound layer, and p-type GaN from the electrode surface is formed. As an intermediate layer for relaxing an energy barrier at a Pt-GaN interface, a PtGa compound having excellent characteristics and stability is included in an electrode structure. |