| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2000-04-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d39d52208e3430f2747788c033c39e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab223b7f2f57fde4f74dc45a55f8440c |
| publicationDate |
2001-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010097906-A |
| titleOfInvention |
Metal thin film for ohmic contact and fabrication method thereof |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal thin film for ohmic contact and a method for manufacturing the same. The disclosed metal thin film includes a contact layer 20 on which various ohmic electrode metals are deposited on various semiconductor substrates, and a luschenite on the contact layer 20. The cover layer 30 is deposited, and an oxide layer by ruthenibium effectively prevents penetration of oxygen into the contact layer during heat treatment, so that high-quality ohmic contact required for high efficiency optical and electronic device development is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101337847-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030075748-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101302450-B1 |
| priorityDate |
2000-04-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |