http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57208138-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4ff9ddf728a7e1a0b36c9cc38b89ad6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1981-06-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2ee0b2607bb77e43414c110cbb4a353 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_299409ea673ca526936322199596c45c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5010aca21cc85fec1c7719d275e23ad |
| publicationDate | 1982-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S57208138-A |
| titleOfInvention | Manufacture of mask for x-ray exposure |
| abstract | PURPOSE:To etch a region to be removed of an Si substrate in a short period of time for shortening the mask manufacturing time, by coating the surface of the Si substrate, except for a region to be removed, with a corrosion-resistant film and then heat-treating the Si substrate under a halogen-containing atmosphere in which a metal or metallic compound is present. CONSTITUTION:A thermal oxide film 12 is formed all over the surfaces of an Si substrate 11, a chromium layer 13 is evaporated on one surface thereof. A polyimide film 14 is formed by rotary-applying a marketing polyimide solution and then thermally polymerizing the same. A circuit pattern 15 made of gold is formed on the film 14, and a polyimide film 16 is formed on the film 14. An oxide film 17 is formed on the upper surface of the film 16 and the side surfaces of the films 14, 16 by the CVD method. The central part of the film 12 on the reverse surface is etched by employing ammonium fluoride. Copper 18 is deposited all over the reverse surface by means of evaporation. Only the central part of the Si substrate 11 is etched by heat-treating the same under a hydrogen chloride gas atmosphere in which copper is present. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6022152-U http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02299219-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59129851-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4606803-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6220310-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S605519-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0458171-B2 |
| priorityDate | 1981-06-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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