http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59124178-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 |
| filingDate | 1982-12-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01e1f4dbb16c9679b773e3517b475b27 |
| publicationDate | 1984-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59124178-A |
| titleOfInvention | Image pickup device |
| abstract | PURPOSE:To obtain a device characterized by low activating energy and high resistivity, by simultaneously sputtering Si and Al in a specified gaseous atmosphere, thereby forming P type amorphous silicon carbide having specified characteristics. CONSTITUTION:P type amorphous silicon carbide is formed by simultaneously sputtering Si and Al in a hydrocarbon mixed gas atmosphere including H2 and Ar. The characteristics of the P type amorphous silicon carbide are as follows: optical band gap is 2.20-1.70V; activating energy is 1.10-0.50eV; and dark resistivity is 10<11>-10<13>OMEGA.cm. In this way, the P type amorphous silicon carbide characterized by low activating energy and high resistivity is obtained. By using the P type amorphous silicon carbide for a charge storage layer of an image pickup deivce, saturated light current can be obtained even at a low applied voltage. |
| priorityDate | 1982-12-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006 |
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