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filingDate 2011-10-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-03-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2012056876-A1
titleOfInvention Ceramic material, member for semiconductor manufacturing apparatus, sputtering target member, and method for manufacturing ceramic material
abstract The ceramic material of the present invention is a ceramic material mainly composed of magnesium, aluminum, oxygen, and nitrogen, and has a crystal phase of a MgO-AlN solid solution in which aluminum nitride is dissolved in magnesium oxide as a main phase. In the MgO-AlN solid solution, the XRD peak of the (200) plane and the (220) plane when using CuKα rays is between the peak of the magnesium oxide cubic crystal and the peak of the aluminum nitride cubic crystal 2θ = 42. It preferably appears at 9 to 44.8 °, 62.3 to 65.2 °, and the XRD peak on the (111) plane is between the magnesium oxide cubic peak and the aluminum nitride cubic peak. It is more preferable to appear at 2θ = 36.9 to 39 °.
priorityDate 2010-10-25^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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